vishay general semiconductor p4sma series document number 88367 14-sep-06 www.vishay.com 1 surface mount t rans z orb ? transient voltage suppressors features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? available in unidirectional and bidirectional 400 w peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % (300 w above 91 v) ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-std-020c, lf max peak of 260 c ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive lo ad switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial and telecommunication. mechanical data case: do-214ac (sma) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: for unidirectional types the band denotes cathode end, no marking on bidirectional types do-214ac (sma) devices for bidirection applications for bidirectional devices use ca suffix (e.g. p4sma10ca). electrical characteristics apply in both directions. major ratings and characteristics v (br) unidirectional 6.8 v to 540 v v (br) bidirectional 6.8 v to 220 v p ppm 400 w, 300 w p d 3.3 w i fsm (unidirectional only) 40 a t j max. 150 c note: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2. rating is 300 w above 91 v (2) mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak power dissipation with a 10/1000 s waveform (1)(2) (fig. 1) p ppm 400 w peak pulse current with a 10/1000 s waveform (1) (fig. 3) i ppm see next table a power dissipation on in finite heatsink, t a = 50 c p d 3.3 w peak forward surge current 8.3 ms si ngle half sine-wave un i-directional only (2) i fsm 40 a operating junction and storage temperature range t j , t stg - 65 to + 150 c
www.vishay.com 2 document number 88367 14-sep-06 vishay general semiconductor p4sma series note: (1) pulse test: t p 50 ms (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee ca62.35 (4) for bidirectional types with v r 10 volts and less, the i d limit is doubled (5) v f = 3.5 v at i f = 25 a (uni-directional only) electrical characteristics (t a = 25 c unless otherwise noted) part number device marking code breakdown voltage v (br) at i t (1) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (4) (a) maximum peak pulse current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) maximum temperature of v (br) (%/c) uni bi min max p4sma6.8a 6v8a 6v8c 6.45 7.14 10 5.80 1000 38.1 10.5 0.057 p4sma7.5a 7v5a 7v5c 7.13 7.88 10 6.40 500 35.4 11.3 0.061 p4sma8.2a 8v2a 8v2c 7.79 8.61 10 7.02 200 33.1 12.1 0.065 p4sma9.1a 9v1a 9v1c 8.65 9.55 1.0 7.78 50.0 29.9 13.4 0.068 p4sma10a 10a 10c 9.5 10.5 1.0 8.55 10.0 27.6 14.5 0.073 p4sma11a 11a 11c 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.075 p4sma12a 12a 12c 11.4 12.6 1.0 10.2 1.0 24.0 16.7 0.078 p4sma13a 13a 13c 12.4 13.7 1.0 11.1 1.0 22.0 18.2 0.081 p4sma15a 15a 15c 14.3 15.8 1.0 12.8 1.0 18.9 21.2 0.084 p4sma16a 16a 16c 15.2 16.8 1.0 13.6 1.0 17.8 22.5 0.086 p4sma18a 18a 18c 17.1 18.9 1.0 15.3 1.0 15.9 25.2 0.089 p4sma20a 20a 20c 19.0 21.0 1.0 17.1 1.0 14.4 27.7 0.090 p4sma22a 22a 22c 20.9 23.1 1.0 18.8 1.0 13.1 30.6 0.092 p4sma24a 24a 24c 22.8 25.2 1.0 20.5 1.0 12.0 33.2 0.090 p4sma27a 27a 27c 25.7 28.4 1.0 23.1 1.0 10.7 37.5 0.096 p4sma30a 30a 30c 28.5 31.5 1.0 25.6 1.0 9.7 41.4 0.097 p4sma33a 33a 33c 31.4 34.7 1.0 28.2 1.0 8.8 45.7 0.098 p4sma36a 36a 36c 34.2 37.8 1.0 30.8 1.0 8.0 49.9 0.099 p4sma39a 39a 39c 37.1 41.0 1.0 33.3 1.0 7.4 53.9 0.100 p4sma43a 43a 43c 40.9 45.2 1.0 36.8 1.0 6.7 59.3 0.101 p4sma47a 47a 47c 44.7 49.4 1.0 40.2 1.0 6.2 64.8 0.101 p4sma51a 51a 51c 48.5 53.6 1.0 43.6 1.0 5.7 70.1 0.102 p4sma56a 56a 56c 53.2 58.8 1.0 47.8 1.0 5.2 77.0 0.103 p4sma62a 62a 62c 58.9 65.1 1.0 53.0 1.0 4.7 85.0 0.104 p4sma68a 68a 68c 64.6 71.4 1.0 58.1 1.0 4.3 92.0 0.104 p4sma75a 75a 75c 71.3 78.8 1.0 64.1 1.0 3.9 104 0.105 p4sma82a 82a 82c 77.9 86.1 1.0 70.1 1.0 3.5 113 0.105 p4sma91a 91a 91c 86.5 95.5 1.0 77.8 1.0 3.2 125 0.106 p4sma100a 100a 100c 95.0 105 1.0 85.5 1.0 2.2 137 0.106 p4sma110a 110a 110c 105 116 1.0 94.0 1.0 2.0 152 0.107 p4sma120a 120a 120c 114 126 1.0 102 1.0 1.8 165 0.107 p4sma130a 130a 130c 124 137 1.0 111 1.0 1.7 179 0.107 p4sma150a 150a 150c 143 158 1.0 128 1.0 1.4 207 0.106 p4sma160a 160a 160c 152 168 1.0 136 1.0 1.4 219 0.108 p4sma170a 170a 170c 162 179 1.0 145 1.0 1.3 234 0.108 p4sma180a 180a 180c 171 189 1.0 154 1.0 1.2 246 0.108 p4sma200a 200a 200c 190 210 1.0 171 1.0 1.1 274 0.108 p4sma220a 220a 220c 209 231 1.0 185 1.0 0.90 328 0.108 p4sma250a 250a - 237 263 1.0 214 1.0 0.87 344 0.110 p4sma300a 300a - 285 315 1.0 256 1.0 0.73 414 0.110 p4sma350a 350a - 333 368 1.0 300 1.0 0.62 482 0.110 p4sma400a 400a - 380 420 1.0 342 1.0 0.55 548 0.110 p4sma440a 440a - 418 462 1.0 376 1.0 0.50 602 0.110 p4sma480a 480a - 456 504 1.0 408 1.0 0.46 658 0.110 p4sma510a 510a - 485 535 1.0 434 1.0 0.43 698 0.110 p4sma540a 540a - 513 567 1.0 459 1.0 0.41 740 0.110
document number 88367 14-sep-06 www.vishay.com 3 p4sma series vishay general semiconductor note: (1) mounted on minimum recommended pad layout ratings and characteristics curves (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit thermal resistance junction to ambient air (1) r ja 120 c/w thermal resistance junction to leads r jl 30 c/w ordering information preferred p/n unit weight (g) preferred package code base quantity delivery mode p4sma6.8a-e3/61 0.064 61 1800 7" diameter plastic tape & reel p4sma6.8a-e3/5a 0.064 5a 7500 13" diameter plastic tape & reel figure 1. peak pulse power rating curve figure 2. pulse power or current versus initial junction temperature 0.1 1 10 100 p4sma6. 8 a - p4sma91a p4sma100a - p4sma220a 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas n on-repetiti v e p u lse w a v eform sho w n in fig. 3 t a = 25 c p ppm , peak p u lse po w er (k w ) td - p u lse w idth (s) 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms 0 25 50 75 100 100 75 50 25 0 125 150 175 200 t j - initial temperat u re (c) peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage, % figure 3. pulse waveform figure 4. typical j unction capacitance 0 50 100 1 5 0 td 0 1.0 2.0 3.0 4.0 tr = 10 sec peak v al u e i ppm half v al u e - i ppm i pp 2 10/1000 sec w a v eform as defined b y r.e.a. t j = 25 c p u lse w idth (td) is defined as the point w here the peak c u rrent decays to 50 % of i ppm i ppm - peak p u lse c u rrent, % i rsm t - time (ms) 10 100 1000 10000 10 1 100 200 uni-directional bi-directional c j , j u nction capacitance (pf) v (br) - breakdo w n v oltage ( v ) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p meas u red at stand-off v oltage v w m
www.vishay.com 4 document number 88367 14-sep-06 vishay general semiconductor p4sma series package outline dimensions in inches (millimeters) figure 5. typical transi ent thermal impedance 1 10 100 1000 0.001 0.01 0.1 100 1 10 1000 tp - p u lse d u ration (s) transient thermal impedance (c/ w ) figure 6. maximum non-repetitive forward surge current uni-directional only 10 5 1 50 100 10 50 100 200 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t j = t j max. 8 .3 ms single half sine- w a v e 0.157 (3.99) 0.177 (4.50) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) 0.074 max. (1. 88 max.) 0.20 8 (5.2 8 ) ref 0.066 mi n . (1.6 8 mi n .) 0.060 mi n . (1.52 mi n .) mountin g pad layout
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